elektronische bauelemente SSE4N60 4.1a, 600 v, r ds(on) 2.5 ? n-channel enhancement mode power mosfet 02-may-2013 rev. a page 1 of 6 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. rohs compliant product a suffix of -c specifies halogen and lead-free description the n-channel mosfet is used an advanced termination scheme to provide enhanced voltage-bloc king capability without degrading performance over time. this advanced technology has been especially tailor ed to minimize on-state resistance, provide superior s witching performance. this device is well suited for high ef ficiency switched mode power suppliers, active power factor correction, electronic lamp ballasts based half bridge topology . features robust high voltage termination avalanche energy specified diode is characterized for use in bridge circuits source to drain diode recovery time comparable to a discrete fast recovery diode. absolute maximum ratings (t c =25c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds 600 v gate-source voltage v gs 30 v continuous drain current i d 4.1 a pulsed drain current i dm 16.4 a power dissipation 2 98 w derating factor above 25c p d 0.78 w / c single pulsed avalanche energy 1 e as 262 mj repetitive avalanche energy 2 e ar 3.9 mj operating junction and storage temperature range t j , t stg 150,-55 ~ 150 c thermal resistance rating maximum junction to ambient 1 r ja 62.5 maximum junction to case r jc 1.28 c / w notes: 1. l=26mh, i as =4.1a, v dd =50v, r g =50 , starting t j =25c 2. repetitive rating: pulse width limited by maxim um junction temperature. to-220y d c q q m e j k i f 2 3 1 a b g h n l millimeter millimeter ref. min. max. ref. min. max. a - 10.6 i 12.70 14.70 b 1.58 1.82 j 3.60 4.80 c 1.20 1.45 k 1.14 1.40 d 14.22 16.50 l 5.84 6.86 e 3.50 4.00 m 2.03 2.90 f 2.70 3.30 n 0.35 0.64 g 1.20 1.78 q 2.34 2.74 h 0.50 1.00 1 gate 3 source 2 drain
elektronische bauelemente SSE4N60 4.1a, 600 v, r ds(on) 2.5 ? n-channel enhancement mode power mosfet 02-may-2013 rev. a page 2 of 6 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions gate-threshold voltage v gs(th) 2 - 4 v v ds =v gs , i d =250 a drain-source on-resistance r ds(on) - 2.0 2.5 v gs =10v, i d =2.05a drain-sounce breakdown voltage bv dss 600 - - v v gs =0, i d =250 a zero gate voltage drain current i dss - - 10 a v ds =600v, v gs =0 gate-body leakage current, forward i gssf - - 100 na v gs =30v, v ds =0 gate-body leakage current, reverse i gssr - - -100 na v gs = -30v, v ds =0 dynamic total gate charge 1.2 q g - 19 - gate-source charge 1.2 q gs - 2.9 - gate-drain charge 1.2 q gd - 8.2 - nc v ds =480v,i d =4.1a, v gs =10v turn-on delay time 1.2 t d(on) - 25 - rise time 1.2 t r - 54 - turn-off delay time 1.2 t d(off) - 120 - fall time 1.2 t f - 34 - ns v dd =300v, i d =4.1a, r g =25 input capacitance ciss - 570 - output capacitance coss - 64 - reverse transfer capacitance crss - 14 - pf v ds =25v, v gs =0, f=1.0mhz maximum continuous drain-source diode forward current i s - - 4.1 a maximum pulsed drain-source diode forward current i sm - - 16.4 a drain-source diode forward voltage v sd - - 1.4 v v gs =0, i s =4a reverse recovery time 1 trr - 560 - ns reverse recovery charge 1 qrr - 1.78 - c v gs =0, i s =4.1a, di f / dt = 100a / s notes: 1. pulse test: pulse width < 300us, duty cycle 2%. 2. basically not affected by working temperature.
elektronische bauelemente SSE4N60 4.1a, 600 v, r ds(on) 2.5 ? n-channel enhancement mode power mosfet 02-may-2013 rev. a page 3 of 6 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curve
elektronische bauelemente SSE4N60 4.1a, 600 v, r ds(on) 2.5 ? n-channel enhancement mode power mosfet 02-may-2013 rev. a page 4 of 6 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curve
elektronische bauelemente SSE4N60 4.1a, 600 v, r ds(on) 2.5 ? n-channel enhancement mode power mosfet 02-may-2013 rev. a page 5 of 6 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curve
elektronische bauelemente SSE4N60 4.1a, 600 v, r ds(on) 2.5 ? n-channel enhancement mode power mosfet 02-may-2013 rev. a page 6 of 6 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curve
|
